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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5359-80SL Preliminary TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level n HIGH POWER P1dB=49.0dBm at 5.3GHz to 5.9GHz n HIGH GAIN G1dB=7.5dB at 5.3GHz to 5.9GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 G CONDITIONS UNIT dBm dB A dB % dBc A C MIN. 48.0 6.5 -25 TYP. MAX. 49.0 7.5 18.0 36 -30 20.0 0.8 16.0 100 VDS= 10V IDSset=10.0A f = 5.3 to 5.9GHz add IM3 Two-Tone Test Po=42.0dBm (Single Carrier Level) (VDS X IDS +Pin-P1dB) X Rth(c-c) IDS2 Tch Recommended Gate Resistance(Rg) : 28 CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) (Max.) UNIT S V A V C/W MIN. -1.0 -5 TYP. 20 -1.8 38 0.5 MAX. -3.0 0.6 ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CONDITIONS VDS= 3V IDS= 12.0A VDS= 3V IDS= 200mA VDS= 3V VGS= 0V IGS= -1.0mA Channel to Case u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Aug. 2006 TIM5359-80SL ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage Temperature SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 26 250 175 -65 to +175 PACKAGE OUTLINE (7-AA02C) 0.70.15 4 - C1.0 (1) Unit in mm 2.5 MIN. (1) Gate (2) Source (3) Drain (2) (2) (3) 1.30.15 20.90.3 +0.05 1.40.3 HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 2.40.3 5.5 MAX. 16.9 MAX. 0.15 -0.05 24.5 MAX. 2.5 MIN. 2.60.3 17.40.4 8.00.2 |
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